Growth of AlxGa1?xN and Mg-Doped GaN Epilayers on Ga- and N-Faces of Bulk GaN Single Crystal Substrates by Molecular-Beam Epitaxy

2002 ◽  
Vol 234 (3) ◽  
pp. 855-858
Author(s):  
M. Konishi ◽  
T. Tanabe ◽  
S. Kubo ◽  
S. Kurai ◽  
T. Taguchi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Bulk Gan ◽  
Mg Doped

scholarly journals Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam

2016 ◽  
Vol 119 (24) ◽  
pp. 245702 ◽  
Author(s):  
Akira Uedono ◽  
Marco Malinverni ◽  
Denis Martin ◽  
Hironori Okumura ◽  
Shoji Ishibashi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Positron Beam ◽  
Mg Doped

Local vibrational modes of H complexes in Mg-doped GaN grown by molecular beam epitaxy

2004 ◽  
Vol 84 (6) ◽  
pp. 897-899 ◽  
Author(s):  
R. Cuscó ◽  
L. Artús ◽  
D. Pastor ◽  
F. B. Naranjo ◽  
E. Calleja
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Vibrational Modes ◽  
Local Vibrational Modes ◽  
Mg Doped

Strain relaxation in single crystal SrTiO3 grown on Si (001) by molecular beam epitaxy

2012 ◽  
Vol 111 (6) ◽  
pp. 064112 ◽  
Author(s):  
Miri Choi ◽  
Agham Posadas ◽  
Rytis Dargis ◽  
Chih-Kang Shih ◽  
Alexander A. Demkov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Strain Relaxation

Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy

1998 ◽  
Vol 537 ◽  
Author(s):  
C.T. Foxon ◽  
T.S. Cheng ◽  
D. Korakakis ◽  
S.V. Novikov ◽  
R.P. Campion ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
Boundary Structure ◽  
Quantum Well Structures ◽  
Flat Surfaces ◽  
Grain Boundary Structure ◽  
Bulk Gan ◽  
Atomically Flat

AbstractVarious methods have been used to initiate growth by Molecular Beam Epitaxy (MBE) of GaN on sapphire, or other substrates, but there is always a problem with morphology and with a high defect density which results in the formation of a sub-grain boundary structure. We show that by using, homo-epitaxial growth on properly prepared bulk GaN substrates, combined with high temperature growth, we obtain a significant improvement in surface morphology. Growth at sufficiently high temperature leads to a rapid smoothing of the surface and to almost atomically flat surfaces over relatively large areas. Multi-Quantum Well structures grown on such GaN epitaxial films are dislocation free with abrupt interfaces.

Novel InGaPBi single crystal grown by molecular beam epitaxy

2015 ◽  
Vol 8 (4) ◽  
pp. 041201 ◽  
Author(s):  
Li Yue ◽  
Peng Wang ◽  
Kai Wang ◽  
Xiaoyan Wu ◽  
Wenwu Pan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam

Study of Substrate Induced Deep Level Defects in Bulk GaN Layers Grown by Molecular Beam Epitaxy Using Deep Level Transient Spectroscopy

2011 ◽  
Vol 295-297 ◽  
pp. 777-780 ◽  
Author(s):  
M. Ajaz Un Nabi ◽  
M. Imran Arshad ◽  
Adnan Ali ◽  
M. Asghar ◽  
M. A Hasan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Diffusion Mechanism ◽  
Electron Trap ◽  
Si Substrate ◽  
Bulk Gan ◽  
Related Defect ◽  
Transient Spectroscopy

In this paper we have investigated the substrate-induced deep level defects in bulk GaN layers grown onp-silicon by molecular beam epitaxy. Representative deep level transient spectroscopy (DLTS) performed on Au-GaN/Si/Al devices displayed only one electron trap E1at 0.23 eV below the conduction band. Owing to out-diffusion mechanism; silicon diffuses into GaN layer from Si substrate maintained at 1050°C, E1level is therefore, attributed to the silicon-related defect. This argument is supported by growth of SiC on Si substrate maintained at 1050°C in MBE chamber using fullerene as a single evaporation source.

InGaN/GaN MQW and Mg-Doped GaN Growth Using a Shutter Control Method by RF-Molecular Beam Epitaxy

1999 ◽  
Vol 176 (1) ◽  
pp. 273-277 ◽  
Author(s):  
S. Nakamura ◽  
A. Kikuchi ◽  
K. Kusakabe ◽  
D. Sugihara ◽  
Y. Toyoura ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Control Method ◽  
Mg Doped

Summary Abstract: Growth of single crystal and polycrystalline insulating fluoride films on semiconductors by molecular beam epitaxy

1982 ◽  
Vol 20 (3) ◽  
pp. 731-732 ◽  
Author(s):  
P. W. Sullivan ◽  
T. I. Cox ◽  
R. F. C. Farrow ◽  
G. R. Jones ◽  
D. B. Gasson ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam

Single-crystal zincblende GaN grown on GaP (100) substrate by molecular beam epitaxy

2003 ◽  
Vol 251 (1-4) ◽  
pp. 465-470 ◽  
Author(s):  
Min-Ho Kim ◽  
F.S. Juang ◽  
Y.G. Hong ◽  
C.W. Tu ◽  
Seong-Ju Park
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam

Homoepitaxial growth of ZnS single crystal thin films by molecular beam epitaxy

1990 ◽  
Vol 99 (1-4) ◽  
pp. 451-454 ◽  
Author(s):  
Yoshitaka Tomomura ◽  
Masahiko Kitagawa ◽  
Akira Suzuki ◽  
Shigeo Nakajima
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Homoepitaxial Growth
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